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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper THO1

InGaAsP/InP quantum well lasers and waveguide devices grown by MOCVD

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Abstract

Quantum well (QW) lasers and modulators have been reported extensively in the GaAs/GaAIAs material system. Very low laser threshold currents have been achieved using the graded-index separate confinement heterostructure (GRIN-SCH), design.1,2 As optical fibers have a loss minimum at 1.55-μm wavelength, there is a strong motivation to explore quantum well devices in this wavelength range for the special requirements of lightwave communication systems.

© 1988 Optical Society of America

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