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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper THO2

Patterned quantum well semiconductor lasers grown by molecular beam epitaxy

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Abstract

Quantum well (QW) injection lasers have been attracting considerable attention because of their low threshold currents, reduced temperature sensitivity, and potentially wider modulation band- widths. Conventional stripe geometry configurations, such as ridge waveguide1 and buried heterostructure,2 have been employed in QW lasers to achieve lateral carrier and optical confinements. We describe the implementation of a new QW patterning method3 in the fabrication of index-guided stripe geometry QW lasers. This method utilizes the lateral thickness variations of QWs grown on nonplanar substrates to achieve lateral patterning in the effective band gap and the refractive index of the laser heterostructure.

© 1988 Optical Society of America

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