InGaAsP/InP (λ = 1.3 μm) and InGaAsP/GaAs (λ = 0.8 μm) quantum well lasers grown by liquid phase epitaxy

D. Z. GARBUZOV; I. N. ARSENTYEV; A. V. OVCHINNIKOV; I. S. TARASOV

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1988),
paper THU4

InGaAsP/InP (λ = 1.3 μm) and InGaAsP/GaAs (λ = 0.8 μm) quantum well lasers grown by liquid phase epitaxy

D. Z. GARBUZOV, I. N. ARSENTYEV, A. V. OVCHINNIKOV, and I. S. TARASOV

Conference on Lasers and Electro-Optics 1988

Anaheim, California United States
25–29 April 1988
ISBN: 1-55752-033-X

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Growth and Performance of Diode Lasers: 2 (THU)

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D. Z. GARBUZOV, I. N. ARSENTYEV, A. V. OVCHINNIKOV, and I. S. TARASOV, "InGaAsP/InP (λ = 1.3 μm) and InGaAsP/GaAs (λ = 0.8 μm) quantum well lasers grown by liquid phase epitaxy," in Conference on Lasers and Electro-Optics, D. Pinnow and P. Moulton, eds., Vol. 7 of OSA Technical Digest (Optica Publishing Group, 1988), paper THU4.

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Abstract

The low-threshold separate-confinement (SC) InGaAsP/lnP and InGaAsP/GaAs lasers on the basis of LPE-grown heterostructures have been described in Refs. 1 and 2. Ultrathin active regions (d_a ~ 300 Å) of these heterostructures have been grown when the substrate was being quickly moved under the melt placed in the growth cell with a narrow output slot. Further perfection of these techniques made it possible to fabricate In- GaAsP/lnP and InGaAsP/GaAs single-quantum- well (SOW) SC lasers with an active layer thickness of ~100 Å and interfacing better than 20 Å.

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