Wavelength bistable electroluminescence from GaAs doping superlattices

GHULAM HASNAIN; J. R. WHINNERY; A. DIENES; D. MARS

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1988),
paper THW2

Wavelength bistable electroluminescence from GaAs doping superlattices

GHULAM HASNAIN, J. R. WHINNERY, A. DIENES, and D. MARS

Conference on Lasers and Electro-Optics 1988

Anaheim, California United States
25–29 April 1988
ISBN: 1-55752-033-X

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G. HASNAIN, J. R. WHINNERY, A. DIENES, and D. MARS, "Wavelength bistable electroluminescence from GaAs doping superlattices," in Conference on Lasers and Electro-Optics, D. Pinnow and P. Moulton, eds., Vol. 7 of OSA Technical Digest (Optica Publishing Group, 1988), paper THW2.

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Abstract

With use of the novel shadow-grown lateral selective contacts,¹ GaAs doping superlattices (nipi structures) have recently been used to demonstrate highly tunable light emitting diodes (LEDs).² The transverse pumping of the nipi structures is investigated, and a wavelength bistable LED is demonstrated.

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