Optoelectronic bistability in gallium phosphide

M. S. CHOI; J. H. HUR; M. A. GUNDERSEN

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1988),
paper WM59

Optoelectronic bistability in gallium phosphide

M. S. CHOI, J. H. HUR, and M. A. GUNDERSEN

Conference on Lasers and Electro-Optics 1988

Anaheim, California United States
25–29 April 1988
ISBN: 1-55752-033-X

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Poster Session: 2 (WM)

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M. S. CHOI, J. H. HUR, and M. A. GUNDERSEN, "Optoelectronic bistability in gallium phosphide," in Conference on Lasers and Electro-Optics, D. Pinnow and P. Moulton, eds., Vol. 7 of OSA Technical Digest (Optica Publishing Group, 1988), paper WM59.

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Abstract

A simple optoelectronic bistability that can be realized in optically gated GaP light emitting diodes is reported. Three functions—current, photoemission intensity, and peak wavelength—showed bistable characteristics.

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