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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper WQ3

Optical measurement of ambipolar carrier diffusivity in direct-gap semiconductors

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Abstract

Carrier diffusion is important in understanding many nonlinear optical phenomena in semiconductors. Carrier diffusion has been studied1 by noninvasive optical techniques such as transient grating and time-resolved photoluminescence. We report a simple technique using single-mode fibers to filter both pump and probe pulses. The pump pulse creates carriers in a small region of the sample, and the delayed probe pulse transmission is used to measure the fractional number of carriers remaining in the inspected region. By varying the size of the illuminated region and the pump-probe delay, both recombination rates and diffusivity can be determined.

© 1988 Optical Society of America

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