Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper WX4

In situ processing for GaAs devices using ultraviolet laser formed oxides

Not Accessible

Your library or personal account may give you access

Abstract

Schottky barrier contacts are one of the most commonly used semiconductor devices and have been the subject of extensive investigations. The study of GaAs-metal contacts reveals that in general Schottky barrier heights correlate only weakly with the work function of the metal. This has been attributed to a high density of electronic states present in the metal-GaAs contacts.

© 1988 Optical Society of America

PDF Article
More Like This
In Situ Excimer Laser Irradiation of GaAs Surfaces During Schottky Barrier Formation*

P.A. Maki and D.J. Ehrlich
MA3 Microphysics of Surfaces, Beams, and Adsorbates (MSBA) 1987

Testing of GaAs devices using optical phase modulation

GREGORY N. KOSKOWICH and MANI SOMA
THM6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1988

Laser-defined epitaxial growth of GaAs

A. DOI, T. MEGURO, S. IWAI, Y. AOYAGI, and SUSUMU NAMBA
THI1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1988

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved