Abstract
There has been great demand for ultrahigh sensitive avalanche photodiodes (APDs) for the future multigigabit optical transmission systems. Although AIGaSb APDs offer a potential advantage for this requirement due to resonance impact ionization,1 no AlGaSb APDs with fully satisfactory performance such as low noise and high speed response has been achieved. We demonstrate here, we believe for the first time, an AlGaSb APD having a very low excess noise factor as well as a large gain bandwidth suitable for higher gigabit operation in the 1.3-1.55-μm wavelength range.
© 1989 Optical Society of America
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