Abstract
Surface emitting (SE) semiconductor lasers1 have been extensively studied for producing 2-D laser arrays. There is a strong motivation to develop 2-D array lasers for high power application, parallel lightwave communication, optical computing, etc. The vertical microcavity SE laser is especially attractive because of its flexibility in 2-D arrays. We have demonstrated low threshold operation of a microcavity SE laser.2 However, the low thermal dissipation of fabricated devices limits the cw operating temperature of SE lasers to 230 K.3 Ogura et al.4 reported cw vertical emission from a semiconductor multilayer structure at room temperature but with a large spectral width (>30 Å) quite different from lasing. Recently, we reported a preliminary result on room temperature cw operation of a GaAs vertical Fabry-Perot cavity SE lasers.5 This paper describes results from a 2- D SE laser array with an output of 75 mW.
© 1989 Optical Society of America
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