Abstract
The emergence of heteroepitaxial technology draws much attention because this technology provides an opportunity to integrate monolithically various devices on different materials such as GaAs-on-Si and GaAs-on-InP. For telecommunication applications, GaAs-on-InP technology is particularly attractive since it enables us to combine the two major optoelectronic materials and optimize the overall circuit performance. For example, integrating GaAs electronics with long wavelength InP based detectors or lasers facilitates the implementation of telecommunication OEICs.
© 1989 Optical Society of America
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