Abstract
Transport on a picosecond or femtosecond time scale in disordered semiconductors is not understood. It is, however, desirable to measure the electronic process close to the mobility edge, such as hot carrier relaxation and carrier capture and thermalization in the shallow bandtail states, because they will increase our understanding of the basic physics in this class of materials and because they control the performance of most devices. Our results to date have already helped improve the models for a-Si:H.1-3 Here we report new results of our investigation of a-Si:H and its alloys with Ge and C by femtosecond time-resolved spectroscopy.
© 1989 Optical Society of America
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