Abstract
We have fabricated a double heterojunction angled stripe AlGaAs superluminescent device consisting of an index guided ridge waveguide in its central region and a planar gain guided region near the emitting facets. This new type of high power superluminescent diode has demonstrated 1% spectral modulation at an output power of 20 mW cw and a slope efficiency of 0.18 mW/mA.
© 1989 Optical Society of America
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