Abstract
A version of the LPE technique with layer deposition on a moving substrate was successfully used earlier for SCH SCW laser fabrication in InGaAsP/InP and InGaAsP / GaAs systems.1-3 It was shown in Ref. 2 that, using long cavity SQW diodes, power conversion efficiency (PCE) as high as 66% can be achieved for SCH InGaAsP/GaAs lasers.
© 1990 Optical Society of America
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