Abstract
There are two ways to shorten the wavelength of the AlGaInP system lasers: by increasing the Al content x of the (Alx-Ga1−x)0.5In0.5P active layer and by introducing the multiple quantum well (MQW) active layer into the GaInP well and AlGaInP barrier layers. By the former, cw operations at 640 nm (20°C),1 621 nm(0°C),2 and 583.6 nm(77 K)3 have been achieved. On the other hand, cw operation of GaInP/ AlInP MQW lasers fabricated by MOCVD have been obtained at 646 nm(25°C)4 and 640 nm(27°C).5
© 1990 Optical Society of America
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