Abstract
Compared with double heterojunction injection lasers, quantum well lasers exhibit a higher efficiency as a result of the 2-D character of the carriers and their steplike density of states function. In addition, their threshold is less sensitive to temperature. This makes them very useful for application in optoelectronic devices. For multiple quantum dot lasers with 0-D carrier systems, even greater improvements of the efficiency and temperature sensitivity of the threshold current were predicted.1 However, at present, the production of multiple quantum box lasers is technically unattainable.
© 1990 Optical Society of America
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