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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CThF6

Wide-wavelength GaInAs P-I-N photodiodes using a lattice-mismatched light-absorbing layer grown by metal-organic vapor-phase epitaxy

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Abstract

Conventional gallium indium arsenide (GaInAs) photodiodes (PDs) are fabricated with an indium phosphide (InP) cap layer and a latticematched GaInAs absorbing layer. Shorter wavelengths are strongly absorbed by this cap layer, resulting in a lower quantum efficiency of a PD with a thicker cap layer.1-3 The temperaturedependent GaInAs absorption-edge wavelength is also the limitation of the responsivity for the longer wavelength region and is attributed to the large temperature dependence of the responsivity at 1.55 μm.

© 1991 Optical Society of America

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