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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CTuF2

High performance 634-nm InGaP/InGaAlP strained quantum-well lasers

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Abstract

Visible semiconductor lasers are attractive for numerous applications in optical interconnects, optical recording, and optical signal processing. Recently much progress has been made in red lasers by using an InGaP/InGaAlP material system. 1-2 However, the laser threshold current increases drastically with decreasing laser wavelength. Moreover, the optical power for lasers at shorter wavelengths is typically low. In this talk, we report high performance InGaP/InGaAlP strained quantum-well (QW) lasers emitting near 630 nm for the first time. We obtained a low-threshold-current density of 1.7 kA/cm2 and a high optical power of 610 mW from a 20-μm-wide broad stripe laser. This is the lowest threshold density and the highest output power ever reported for 630-nm lasers, to the best of our knowledge.

© 1991 Optical Society of America

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