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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CTuW60

Electroabsorption properties of strained-layer InxGa1-xAs/GaAs superlattices

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Abstract

We have investigated the electroabsorption (EA) effects of strained-layer InxGa1-xAs/GaAs superlattices (SLs) for the following reasons. First, high-quality, strained-layer InxGa1-xAs/GaAs multiple-quantum-wells (MQWs) have been grown on GaAs by interposing an InxGa1-xAs/GaAs SL between the GaAs and the MQW region.1 Second, novel EA effects, which provide large absorption change, have been reported recently2,3 in SL structures using the Wannier- Stark localization effect, and such structures have been used for surface-normal EA modulator applications.4

© 1991 Optical Society of America

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