Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CWB1

HgCdTe on Si for monolithic FPAs

Not Accessible

Your library or personal account may give you access

Abstract

Present infrared focal plane arrays (FPAs) are limited by the yield of the HgCdTe arrays, the availability of large area substrates for HgCdTe, and the yield of the indium bump bonds between the readout and the HgCdTe array. The use of the Si rather than CdTe, Al2O3 or GaAs for the HgCdTe substrate eliminates the thermal expansion mismatch between the readout and the substrate which, improves the yield of bump bonds for the smaller arrays and allows the dimensions of the arrays to be increased beyond a cm. The growth of HgCdTe directly on the readout and the resulting elimination of the bump bond reduces even further fabrication and testing costs

© 1991 Optical Society of America

PDF Article
More Like This
Large format PACE HgCdTe FPA performance

L. J. Kozlowski, R- B Bailey, J. K. Chen, K. Vural, W. E. Tennant, J. S. Chen, E. R. Gertner, and S. J. Irvine
CWB2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991

Improved single quantum-well GaAs-on-Si lasers with AlGaAs/AlGaP intermediate layers by metalorganic chemical vapor deposition

Yasuhiko Hayashi, Takashi Egawa, Tetsuo Soga, Takashi Jimbo, and Masayoshi Umeno
CWP7 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991

Formation of Submicrometer Carbonaceous Islands During SEM Examination of Thin GaAs Layers on Si Substrates

G.W. Turner and P.M. Nitishin
WC8 The Microphysics of Surfaces: Beam-Induced Processes (MSBA) 1991

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved