Abstract
Present infrared focal plane arrays (FPAs) are limited by the yield of the HgCdTe arrays, the availability of large area substrates for HgCdTe, and the yield of the indium bump bonds between the readout and the HgCdTe array. The use of the Si rather than CdTe, Al2O3 or GaAs for the HgCdTe substrate eliminates the thermal expansion mismatch between the readout and the substrate which, improves the yield of bump bonds for the smaller arrays and allows the dimensions of the arrays to be increased beyond a cm. The growth of HgCdTe directly on the readout and the resulting elimination of the bump bond reduces even further fabrication and testing costs
© 1991 Optical Society of America
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