Kinetics IR lasers due to Xe atomic transitions excited by ionizing radiations

A. M. Voinov; S. P. Melnikov; A. A. Sinyanskii

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1991),
paper CWF11

Kinetics IR lasers due to Xe atomic transitions excited by ionizing radiations

A. M. Voinov, S. P. Melnikov, and A. A. Sinyanskii

Conference on Lasers and Electro-Optics 1991

Baltimore, Maryland United States
12–17 May 1991
ISBN: 1-55752-189-1

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A. M. Voinov, S. P. Melnikov, and A. A. Sinyanskii, "Kinetics IR lasers due to Xe atomic transitions excited by ionizing radiations," in Conference on Lasers and Electro-Optics, J. Bufton, A. Glass, T. Hsu, and W. Krupke, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1991), paper CWF11.

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Abstract

In the published works of other authors the process of dissociative recombination Xe₂ molecular ions with electrons is considered harmful, populating the low laser levels 6p. It is usually proposed that populating the upper laser levels 5d takes place either as a result of dissociative recombination ArXe⁺ heteronuclear ions with electrons or as a result of collisional-radiative recombination.¹

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