Abstract

High-power lasers at 1.48 μm wavelength are highly desirable for Erbium-doped fiber amplifiers. Several reports have predicted that strained multiple quantum well (MQW) structures give rise to novel electric properties because of the strain induced modification of the band structure,¹ promising high-power operation. The reported high-performance devices used strained InGaAs quantum wells (QW) in the active regions.^2-5 We have, however, tried to use biaxially compressed GaInAsP layers in the MQW active region, because the strained quaternary QW structures have advantages such as flexibility on the device design and a larger conduction band offset value compared with conventional ternary QW structures. In this report, we demonstrate the high power operation of strained MQW lasers with 1.5% compressed GaInAsP wells entirely grown by metal organic vapor phase epitaxy (MOVPE) for the first time.

© 1991 Optical Society of America