Abstract

Highly strained quantum-well lasers with very low threshold current densities, using In_1-xGa_λAs grown on InGaAsP lattice matched to InP, have been recently demonstrated.^1,2 For such highly strained materials, either under compression or tension, the coupling among the spin-orbit split- off band and the heavy- and light-hole bands becomes very important. Even at the zone center, the effect of coupling between the light-hole and the split-off baud is too large to be ignored.

© 1991 Optical Society of America