Abstract
We have demonstrated what we believe to be the first laser diodes ever fabricated from wide band gap II–VI semiconductors. These devices emit coherent, linearly TE polarized light at wavelengths from 490 to 512 nm at 77 K under pulsed current injection—the shortest wavelengths ever generated by a semiconductor lasr diode. Room temperature pulsed operation was recently achieved in devices that had highly reflective coatings on the facets (uncoated, the reflectivity is only 0.21). The lasing wavelengths were from 508 to 535 nm.
© 1992 Optical Society of America
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