Abstract
AlGaInP strained layer QW lasers were extensively studied thus far by metalorganic chemical vapor deposition (MOCVD), producing very low threshold current densities1,2 and high optical power.3,4 In this paper, we report what we believe to be the first successful operation of SSQ GaInP/AlInp visible lasers grown by gas source molecular beam epitaxy (GSMBE).3 A novel shutter control method carried out during one monolayer (ML) growth was employed to produce tensile and compressive GaInP layers. Very low threshold current densities of 329 A/cm2 and 1.95 kA/cm2 were achieved for compressive (700 nm in wavelength) and tensile (632 nm), respectively.
© 1992 Optical Society of America
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