Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CMF4

Strained SQW GaInP/AlInP visible lasers fabricated by a novel shutter control method in gas source molecular beam epitaxy

Not Accessible

Your library or personal account may give you access

Abstract

AlGaInP strained layer QW lasers were extensively studied thus far by metalorganic chemical vapor deposition (MOCVD), producing very low threshold current densities1,2 and high optical power.3,4 In this paper, we report what we believe to be the first successful operation of SSQ GaInP/AlInp visible lasers grown by gas source molecular beam epitaxy (GSMBE).3 A novel shutter control method carried out during one monolayer (ML) growth was employed to produce tensile and compressive GaInP layers. Very low threshold current densities of 329 A/cm2 and 1.95 kA/cm2 were achieved for compressive (700 nm in wavelength) and tensile (632 nm), respectively.

© 1992 Optical Society of America

PDF Article
More Like This
GaInP/AlInP quasi-quaternary crystals and 607-640-nm wavelength quasi quaternary lasers grown by gas-source-molecular beam epitaxy

Yawara Kaneko, Katsumi Kishino, Ichirou Nomura, and Akihiko Kikuchi
CThQ2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

Substrate misorientation effects in 660-nm bulk GaInP active layer lasers grown by gas-source molecular beam epitaxy.

Akihiko Kikuchi and Katsumi Kishino
CWG48 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992

Characterization of Lasing Properties and Optical Anisotropy in GaInP/AlInP Compressive Stain Multi-quantum-wire Lasers

Junji Yoshida, Akihiko Kikuchi, Ichirou Nomura, and Katsumi Kishino
18P.24 Optoelectronics and Communications Conference (OECC) 1996

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved