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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CMG5

Ultrahigh photorefractive sensitivity in AlGaAs/GaAs MQWs

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Abstract

The quantum-confined Franz-Keldysh effect in semiconductor MQWs represents a large resonant enhancement of electro-optical (EO) properties for photon energies dose to the exciton transition energies. This quadratic EO effect is 400 times larger than the linear EO effect in GaAs for an applied electric field of 104 V/cm.1 Because of the quadratic dependence of the refractive index on electric field, the photorefraetive gains of the QWs are therefore potentially 800 times larger than the gains in bulk semiconductors at this field strength, assuming a phase shift of 90° of the refractive-index grating relative to the intensity grating.

© 1992 Optical Society of America

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