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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CMG6

Cr-doped semi-insulating GaAs/AlGaAs MQWs for image processing at diode laser wavelengths

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Abstract

The photorefractive process has been extensively studied in recent years for applications in real-time optical image processing.1 Most of this work has involved Bragg diffraction from, volume gratings written in bulk semi-insulating crystals. The angular sensitivity of Bragg diffraction, however, places stringent limitations on the space-bandwidth product of the photorefractive (PR) devices for uses such as correlation and convolution of images,2 More recently, the use of ion-implanted MQW structures for the PR effect was proposed and demonstrated.2 The large excitonic EO nonlinearities of the MQWs allow observation of reasonable diffraction efficiencies (~1%) in their short interaction lengths ( ~ several microns). In addition to high sensitivity (~100 times bulk materials), the small interaction lengths of the MQW devices can potentially overcome the shortcomings of bulk media in image processing use.

© 1992 Optical Society of America

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