Abstract
We have reduced the voltage required for threshold in vertical cavity surface emitting lasers (VCSEL) to 1.7 V [1], the lowest yet reported [2]. Room-temperature current threshold was 3 mA pulsed, 4 mA CW. This advance in VCSEL technology leads to manageable heat dissipation for high packing densities. It was achieved in a structure which can be further optimized for high wallplug efficiency and high powers. Furthermore the thickness of the molecular beam epitaxially (MBE) grown portion of the structure was reduced by about 1.5 µm compared to conventional VCSELs, resulting in decreased MBE costs, significantly shallower processing depths and easier integration of VCSELs with transistors or other electronics. The (resistance x area) products of our VCSELs are nearly as low as those reported for high-power edge-emitting lasers.
© 1992 Optical Society of America
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