Abstract
Electric driving of the dispersion law (DL) of an interface plasmon polariton (IPP) propagating in a Schottky-barrier polariton–active structure metal (1)-semi-conductor (2), see Fig. 1(a), is proposed. An electric bias applied to this structure results in the change of thickness D of the depletion region at the metal-semiconductor interface and, hence, in the change of the DL of IPP in this three-layer structure. This method may also be employed in hetero- and homojunction and in MIS-structures.
© 1992 Optical Society of America
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