Abstract
The subject of this report is the experimental and theoretical research of the periodical relief formation upon a GaAs surface, arising from photochemical wet etching due to the influence of the Ah laser radiation. The main goals of our investigation were the measurements of the dominant surface ripples growth increments, periods, and orientations of the structure directly in the etching process. Comparison of this information with theoretical results has allowed us to prove the generation mechanism we offered previously.1,2 The next task was the determination of this method's possibilities for the one-step maskless production of harmonic phased gratings with periods 0.35-0.5 pm.
© 1992 Optical Society of America
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