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Conferences > CLEO > 1992 > CThJ > CThJ5
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CThJ5

Resistless pattern etching of SiO2 by KrF laser and CF2 radicals

M. Murahara and T. Obara

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Abstract

Photo resist is widely used for SiO2 etching, and resistless etching is needed to simplify the semiconductor processes. Methods of selective photoetching of SiO2 by CF2 or NF3 excited by excimer laser have been reported.1-3 Recently, resistless etching by irradiating synchrotron radiation or an Ar excimer laser has been reported.4 These methods, however, are not truly etching because of the Si liberated on the substrate.

© 1992 Optical Society of America

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