Tunable electroabsorption in laterally contacted high contrast n-i-p-i doping superlattice modulator

K.H. Gulden; W. Wu; J. Walker; J. S. Smith; J. R. Whinnery; P. Kiesel; T. Gabler; P. Riel; G. H. Dohler

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1992),
paper CThM3

Tunable electroabsorption in laterally contacted high contrast n-i-p-i doping superlattice modulator

K.H. Gulden, W. Wu, J. Walker, J. S. Smith, J. R. Whinnery, P. Kiesel, T. Gabler, P. Riel, and G. H. Dohler

Conference on Lasers and Electro-Optics 1992

Anaheim, California United States
10–15 May 1992
ISBN: 1-55752-537-5

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Waveguide and Super-lattice Devices (CThM)

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K. H. Gulden, W. Wu, J. Walker, J. S. Smith, J. R. Whinnery, P. Kiesel, T. Gabler, P. Riel, and G. H. Dohler, "Tunable electroabsorption in laterally contacted high contrast n-i-p-i doping superlattice modulator," in Conference on Lasers and Electro-Optics, A. Johnson, R. Lind, T. Baer, and A. Smirl, eds., Vol. 12 of OSA Technical Digest (Optica Publishing Group, 1992), paper CThM3.

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Abstract

The increasing interest in optical data processing enhances the need for reliable high performance optical modulators. The Franz-Keldysh effect offers potentially high absorption changes over a broad spectral range with low insertion losses.¹ In a laterally contacted GaAs n-i-p-i doping superlattice the internal electric fields can be tuned externally to control the absorption both below and above the band gap. Our newly developed shadow mask MBE regrowth technique² allows the building of laterally contacted n-i-p-i structures with typical dimensions of several microns. For such small structures switching speeds in the GHz range are expected.

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