Ultrafast measurements of the nonlinear transmission changes in a GaAs SQW waveguide structure with potential use for all-optical switches

P. Li Kam Wa; A. Miller; R. Bhamba; A. Cavailles; A. Cavailles; A. L. Moretti; A. L. Moretti; R. W. Wickman; R. W. Wickman; K. A. Stair; K. A. Stair; T. E. Bird; T. E. Bird

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1992),
paper CTuK48

Ultrafast measurements of the nonlinear transmission changes in a GaAs SQW waveguide structure with potential use for all-optical switches

P. Li Kam Wa, A. Miller, R. Bhamba, A. Cavailles, A. L. Moretti, R. W. Wickman, K. A. Stair, and T. E. Bird

Conference on Lasers and Electro-Optics 1992

Anaheim, California United States
10–15 May 1992
ISBN: 1-55752-537-5

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CLEO Poster Session 1 (CTuK)

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P. Li Kam Wa, A. Miller, R. Bhamba, A. Cavailles, A. L. Moretti, R. W. Wickman, K. A. Stair, and T. E. Bird, "Ultrafast measurements of the nonlinear transmission changes in a GaAs SQW waveguide structure with potential use for all-optical switches," in Conference on Lasers and Electro-Optics, A. Johnson, R. Lind, T. Baer, and A. Smirl, eds., Vol. 12 of OSA Technical Digest (Optica Publishing Group, 1992), paper CTuK48.

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Abstract

We have previously demonstrated picosecond all-optical switching in a waveguide directional coupler.¹ It was shown that cross-well carrier sweep-out could be used to increase the recovery speed of the device by over an order of magnitude by employing a p-i-n doped structure.² In this work, we report time resolved measurements of optical nonlinearities in a waveguide structure containing a single GaAs QW which exhibits a fast recovery without the need for an applied electric field. We observe phenomena associated with exciton absorption quenching and screening of the internal field resulting in a dynamic shift of the absorption edge by the quantum confined Stark effect.

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