Abstract
Very low·threshold current densities have been demonstrated in strained-layer InxGa1-xAs-GaAs SQW heterostructure lasers having a number of different structures. In this paper, the transparency carrier and current densities for ideal and practical step graded strained-layer SQW heterostructure laser structures are compared. The effects of inner barrier layer composition and thickness on these densities and the optical confinement factor are outlined. Optimized structures for minimum laser threshold current density are described. Finally, these design criteria are applied to previously reported strained-layer laser structures and the results compared with experimental data on laser threshold current density, cavity length.
© 1992 Optical Society of America
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