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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CTuS6

Electric field dependent effects in multiple short period strained-layer superlattice QW waveguides

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Abstract

We present measurements of electric field dependent effects in InAs/GaAs short period strained-layer superlattices (SPSLS) used as quantum wells in the i region of a p-i-n waveguide. These materials are important because they provide effective modulators in the wavelength region from 980 nm to 1.06 μm. All-binary SPSLS' have an advantage over strained ternaries in that more strain, and hence a higher indium content, can be accommodated before the onset of strain-related defects.

© 1992 Optical Society of America

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