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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CWK2

Pressure- and carrier-induced type I/type II crossover in a (GaAs)15/(AlAs)5 superlattice

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Abstract

In a type II GaAs/AlAs superlattice CSL), the energetically lowest conduction- band state and the highest valence-band state are confined to Ae GaAs and AlAs layers, respectively. Photoexeitation of the direct transition from the valence to the conduction band at the F-point in the GaAs in such a SL results in a subsequent rapid transfer of the created electrons from the Γ-minimum in the GaAs to the X-minimum in the AlAs.

© 1992 Optical Society of America

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