Abstract
Optimization of devices such as grating surface emitting lasers1 depends on the strength of second-order Bragg gratings in semiconductor waveguides. Theoretical grating strength models can predict grating strength, but there have been no experimental measurements reported of wavelength dependence of outcoupling and reflection in semiconductors against which to test their accuracy and identify discrepancies between real structures and those modeled.
© 1992 Optical Society of America
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