Abstract

Recently, we have demonstrated that terahertz radiation can be induced from semiconductor surfaces by femtosecond optical excitation.¹ Since this radiation carries information about the photocarriers and the built- in field, by studying it we can learn about the properties of the interface and carrier dynamics in semiconductors.

Recently, we have demonstrated that terahertz radiation can be induced from semiconductor surfaces by femtosecond optical excitation.¹ Since this radiation carries information about the photocarriers and the built- in field, by studying it we can learn about the properties of the interface and carrier dynamics in semiconductors. We have used this technique to study a Schottky structure. We illuminated the structure with a laser pulse to induce THz radiation. But monitoring the amplitude of the radiated waveform while varying the bias voltage across the structure, we can determine the value of the Schottky barrier.

© 1992 Optical Society of America