Abstract
Photoconductive sampling has been shown to be an effective technique for the characterization of ultrahigh-speed electrical devices.1 Measurements of devices with > 100-GHz bandwidth have been demonstrated.2,3 Additionally, a multigap method has been used to characterize the S-parameter of a passive device.4 Photoconductive sampling offers the ability for on-wafer testing of MMICs. Although more stringent design constraints are required, this technique offers high-frequency measurements before the wafer is diced. In this paper, we demonstrate a new six-gap method that eliminates the need for windowing the input and reflected waveforms to characterize the S-parameter of a 60-GHz MMIC amplifier on-wafer. More importantly, the six-gap method allows for a much smaller design of the optical test structure associated with the MMIC, thus saving valuable real estate on the wafer. This method also accounts for the return loss from imperfect termination of the microstrip line, resulting in a more accurate measurement.
© 1992 Optical Society of America
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