Ultrafast Laser Processing of Semiconductor Devices

J.E. Carey; M.U. Pralle; C.J. Vineis; J. McKee; S. Alie; J.W. Sickler; X. Li; J. Jiang; D. Miller; C. Palsule; H. Haddad

doi:10.1364/CLEO_AT.2011.AMD1

CLEO:2011 - Laser Applications to Photonic Applications
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper AMD1
•https://doi.org/10.1364/CLEO_AT.2011.AMD1

Ultrafast Laser Processing of Semiconductor Devices

J.E. Carey, M.U. Pralle, C.J. Vineis, J. McKee, S. Alie, J.W. Sickler, X. Li, J. Jiang, D. Miller, C. Palsule, and H. Haddad

CLEO: Applications and Technology 2011

Baltimore, Maryland United States
1–6 May 2011
ISBN: 978-1-55752-910-7

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Laser Micro and Nano Structuring (AMD)

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J. E. Carey, M. U. Pralle, C. J. Vineis, J. McKee, S. Alie, J. W. Sickler, X. Li, J. Jiang, D. Miller, C. Palsule, and H. Haddad, "Ultrafast Laser Processing of Semiconductor Devices," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper AMD1.

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Abstract

SiOnyx is developing ultrafast laser processing techniques that improve the performance of semiconductor based photodetectors, solar cells, and image sensors. Ultrafast laser processing offers the unique ability to locally engineer the structural and doping characteristics of semiconductor devices and avoid adverse side effects. Ultrafast laser processing is incorporated into a variety of devices to increase the collection of longer wavelength light and improve quantum efficiency while maintaining scalability and CMOS compatibility.

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