Abstract
Most commercial c-plane InGaN quantum well (QW) LEDs show an early turn-on voltage, which is significantly lower than the value predicted by numerical simulation even with perfect contacts. To make a more realistic structure for simulations, nano-scale Indium fluctuations were included in the QWs. Simulations of current-voltage (I-V) characteristics using a 2D drift-diffusion solver showed much lower turn-on voltages than models with homogeneous layers and the calculated I-V agreed with experimental value, which may be due to the lateral fluctuations in the potential barrier due to indium fluctuation within the QWs.
© 2012 Optical Society of America
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