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Photoluminescence from GeSn/Ge Heterostructure Microdisks with 6% Sn Grown on Si via CVD

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Abstract

GeSn/Ge heterostructure microdisks integrated on Si were fabricated. The quality of material grown by CVD was investigated and the photoluminescence spectrum was measured using a Ti:Sapphire laser as an excitation source under variable pump powers.

© 2014 Optical Society of America

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