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Conferences > CLEO_AT > 2017 > AM2B > AM2B.2

Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser

Huolei Wang, Dongwan Kim, Mark Harfouche, Naresh Satyan, George Rakuljic, and Amnon Yariv

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Abstract

We demonstrate a narrow-linewidth heterogeneously integrated silicon/III-V laser based on the oxide-confinement method. The laser achieves an output power of 4 mW and a linewidth of 28 kHz with a threshold current of 60 mA and a side mode suppression ratio of 50 dB at 1574 nm.

© 2017 Optical Society of America

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