Enhanced Internal-Quantum Efficiency of GaN-based Light-Emitting Diodes with a Larger Post-Duty Cycle of Patterned-Sapphire Substrates

Vin-Cent Su; Vin-Cent Su; Po-Hsun Chen; Po-Hsun Chen; Ta-Cheng Hsu; Yu-Yao Lin; Chieh-Hsiung Kuan

doi:10.1364/CLEO_AT.2017.AM2B.5

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper AM2B.5
•https://doi.org/10.1364/CLEO_AT.2017.AM2B.5

Enhanced Internal-Quantum Efficiency of GaN-based Light-Emitting Diodes with a Larger Post-Duty Cycle of Patterned-Sapphire Substrates

Vin-Cent Su, Po-Hsun Chen, Ta-Cheng Hsu, Yu-Yao Lin, and Chieh-Hsiung Kuan

CLEO: Applications and Technology 2017

San Jose, California United States
14–19 May 2017
ISBN: 978-1-943580-27-9

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Mid-IR Sensors and Emitters (AM2B)

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V. Su, P. Chen, T. Hsu, Y. Lin, and C. Kuan, "Enhanced Internal-Quantum Efficiency of GaN-based Light-Emitting Diodes with a Larger Post-Duty Cycle of Patterned-Sapphire Substrates," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper AM2B.5.

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Abstract

This paper reports the improvement of internal-quantum efficiency in GaN-based light-emitting diodes grown on the 2000-nm-period patterned-sapphire substrates with a larger post-duty cycle under the same etching depth.

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