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Optically Pumped GeSn-edge-emitting Laser with Emission at 3 µm for Si Photonics

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Abstract

We presented optically pumped edge-emitting GeSn laser with 22.3% world-record maximum Sn content and 3 µm emission wavelength. Lasing threshold of 139 kW/cm2 at 77 K and maximum operating temperature of 150 K were achieved.

© 2018 The Author(s)

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