Beam Quality Factor Analysis of On-Wafer Vertical Cavity Surface Emitting Lasers

Kirk A. Ingold; Joshua D. Tate; Brian E. Souhan; James J. Raftery

doi:10.1364/CLEO_AT.2018.AW4O.3

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2018),
paper AW4O.3
•https://doi.org/10.1364/CLEO_AT.2018.AW4O.3

Beam Quality Factor Analysis of On-Wafer Vertical Cavity Surface Emitting Lasers

Kirk A. Ingold, Joshua D. Tate, Brian E. Souhan, and James J. Raftery

CLEO: Applications and Technology 2018

San Jose, California United States
13–18 May 2018
ISBN: 978-1-943580-42-2

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Novel Laser Charaterization (AW4O)

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K. A. Ingold, J. D. Tate, B. E. Souhan, and J. J. Raftery, "Beam Quality Factor Analysis of On-Wafer Vertical Cavity Surface Emitting Lasers," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2018), paper AW4O.3.

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Abstract

We report on a method for analyzing the beam quality factor of on-wafer vertical cavity surface emitting lasers (VCSEL) leading to an M2 min-max for each measured device due to asymmetry in the beam profile.

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