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Single-crystalline Te-hyperdoped silicon via controlling the velocity of ultra-fast cooling during femtosecond-laser irradiation

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Abstract

We implement single-crystalline tellurium (Te)-hyperdoped silicon via controlling the velocity of ultra-fast cooling during femtosecond-laser irradiation, providing a new path of less defective semiconductor hyperdoping, has great potential in applications of low noise semiconductor devices.

© 2019 The Author(s)

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