Abstract

High power, efficient diode-laser bars with narrow far field angles are sought for many applications, for example in the 9xx nm-range for the pumping of Yb:YAG disc and slab lasers [1,2]. In previous work, broad-area (BA) diode-laser bars with 4 mm resonator length operated with high conversion efficiency η= 62% at operating power P_op = 1 kW in quasi-continuous wave testing (200 μs, 10 Hz), by using low optical loss and low-resistivity vertical structures and high fill-factors (~70%) [1]. Lateral far field (95% power) was Θ_95% > 10° [2]. However, higher η and narrower Θ95% are needed for industrial application, and we seek improvements by altering the lateral bar structure for a fixed vertical design (from [1], wavelength λ= 930 nm, loss α_i ≤ 0.4 cm^-1).

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