Abstract

High-power semiconductor DFB lasers with low divergence angle fundamental transverse mode operating at wavelengths near 1.31 μm have many applications such as analog and digital fiber communication, WDM pump sources, spectroscopy, remote sensing, free-space communication, laser-based radar, and wavelength conversion in nonlinear materials [1]. These devices can potentially reduce system costs by simplifying optical alignment and package processes [2]. Devices with narrow far-field patterns (FFPs) are highly desirable for simple, high-yield optical alignment, as a low divergence angle improves the coupling efficiency and imposes less stringent tolerances in the alignment between the device and the single-mode fiber (SMF). Until now most of the high-power low divergence angle 1.31 μm DFB laser is based on InGaAsP/InP material system which has lower characteristic temperature value T₀ [3]. Here we first demonstrate the high-power fundamental transverse mode 1.31 μm AlGaInAs/InP DFB laser with low divergence angle, enabling uncooled continuous-wave (CW) operation at high ambient temperatures.

© 2019 IEEE