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Recombination of ground state (GS) and excited state (ES) electrons and holes in semiconductor lasers may lead to simultaneous lasing at both states, which is important for applications in all-optical switches and converters used in all-optical networks. Two state lasing in quantum dot lasers has been extensively studied over the last decade [1-2]. For the pulsed pumping, it has been shown that the GS and ES turn-ons result from different physical mechanisms. Extremely fast dynamical interaction between the lasing states defines the two successive laser thresholds with significant delays between the GS and ES turn-ons [3]. In this work, we explore the simultaneous generation from GS and ES in quantum well laser under various pulsed pumping conditions.
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