Semiconductors as Highly Efficient Single and Multicycle Terahertz Sources

Gergő Krizsán; Gergő Krizsán; Nelson M. Mbithi; Nelson M. Mbithi; Gyula Polónyi; Gyula Polónyi; György Tóth; Mátyás Mechler; János Hebling; János Hebling; János Hebling; József A. Fülöp; József A. Fülöp; József A. Fülöp

2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 2019),
paper cc_p_22

Semiconductors as Highly Efficient Single and Multicycle Terahertz Sources

Gergő Krizsán, Nelson M. Mbithi, Gyula Polónyi, György Tóth, Mátyás Mechler, János Hebling, and József A. Fülöp

The European Conference on Lasers and Electro-Optics 2019

Munich Germany
23–27 June 2019
ISBN: 978-1-7281-0469-0

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G. Krizsán, N. M. Mbithi, G. Polónyi, G. Tóth, M. Mechler, J. Hebling, and J. A. Fülöp, "Semiconductors as Highly Efficient Single and Multicycle Terahertz Sources," in 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, OSA Technical Digest (Optica Publishing Group, 2019), paper cc_p_22.

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Abstract

The low- (0.1-2 THz) and mid-frequency (2-20 THz) bands of the THz range can be accessed by optical rectification (OR) in LiNbO₃ (LN) [1] and organic crystals [2], respectively. The low -frequency band is optimally fitting for acceleration of charged particle beams. However, further increasing the THz pulse energy and field strength is challenging.

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